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| ZXMN10A11K 100V DPAK N-channel enhancement mode MOSFET Summary V(BR)DSS 100 RDS(on) ( ) 0.350 @ VGS= 10V 0.450 @ VGS= 6V ID (A) 3.5 3.1 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. D G S Features * * * * * Low on-resistance Fast switching speed Low threshold Low gate drive DPAK package D Applications * * * * DC-DC converters Power management functions Disconnect switches Motor control D G S Pinout - top view Ordering information Device ZXMN10A11KTC Reel size (inches) 13 Tape width (mm) 16 Quantity per reel 2,500 Device marking ZXMN 10A11 Issue 1 - August 2006 (c) Zetex Semiconductors plc 2006 1 www.zetex.com ZXMN10A11K Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ VGS= 10V; Tamb=25C(b) @ VGS= 10V; Tamb=70C(b) @ VGS= 10V; Tamb=25C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Pulsed source current (body diode)(c) Power dissipation at Tamb =25C(a) Linear derating factor Power dissipation at Tamb =25C(b) Linear derating factor Power dissipation at Tamb =25C(d) Linear derating factor Operating and storage temperature range Tj, Tstg PD PD IDM IS ISM PD Symbol VDSS VGS ID Limit 100 20 3.5 2.8 2.4 9.9 8.35 9.9 4.06 32.4 8.5 68 2.11 16.8 -55 to +150 A A A W mW/C W mW/C W mW/C C Unit V V A Thermal resistance Parameter Junction to ambient(a) Junction to ambient(b) Junction to ambient(d) Symbol R JA R JA R JA Limit 30.8 14.7 59.1 Unit C/W C/W C/W NOTES: (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum junction temperature. (d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 1 - August 2006 (c) Zetex Semiconductors plc 2006 2 www.zetex.com ZXMN10A11K Thermal characteristics Issue 1 - August 2006 (c) Zetex Semiconductors plc 2006 3 www.zetex.com ZXMN10A11K Electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Static Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage V(BR)DSS IDSS IGSS 2.0 RDS(on) 4 100 1 100 4.0 0.350 0.450 S V A nA V ID= 250 A, VGS=0V VDS= 100V, VGS=0V VGS=20V, VDS=0V ID= 250 A, VDS=VGS VGS= 10V, ID= 2.6A VGS= 6V, ID = 1.3A VDS= 15V, ID= 2.6A VDS= 50V, VGS=0V f=1MHz Symbol Min. Typ. Max. Unit Conditions Gate-source threshold voltage VGS(th) Static drain-source on-state resistance (*) Forward transconductance(*) () gfs Dynamic() Input capacitance Output capacitance Reverse transfer capacitance Switching () () Turn-on-delay time Rise time Turn-off delay time Fall time Gate charge Total gate charge Gate-source charge Gate drain charge Source-drain diode Diode forward voltage(*) Reverse recovery time () Reverse recovery charge() VSD trr Qrr td(on) tr td(off) tf Qg Qg Qgs Qgd Ciss Coss Crss 274 21 11 pF pF pF 2.7 1.7 7.4 3.5 3 5.4 1.4 1.5 0.85 26 30 0.95 ns ns ns ns nC nC nC nC V ns nC VDD= 50V, ID= 1A RG6.0 , VGS= 10V VDS= 50V, VGS= 5V ID= 2.5A VDS= 50V, VGS= 10V ID= 2.5A Tj=25C, IS= 1.85A, VGS=0V Tj=25C, IS= 1A, di/dt=100A/ s NOTES: (*) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. () Switching characteristics are independent of operating junction temperature. () For design aid only, not subject to production testing. Issue 1 - August 2006 (c) Zetex Semiconductors plc 2006 4 www.zetex.com ZXMN10A11K Typical Characteristics Issue 1 - August 2006 (c) Zetex Semiconductors plc 2006 5 www.zetex.com ZXMN10A11K Typical Characteristics Current regulator QG 12V 50k Same as D.U.T VG QGS QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% VGS RG RD VDS VCC 10% VGS td(on) t(on) tr td(off) t(on) tr Switching time waveforms Switching time test circuit Issue 1 - August 2006 (c) Zetex Semiconductors plc 2006 6 www.zetex.com ZXMN10A11K Intentionally left blank Issue 1 - August 2006 (c) Zetex Semiconductors plc 2006 7 www.zetex.com ZXMN10A11K Package outline - DPAK DIM A A1 b b2 b3 c c2 D D1 E E1 Inches Min Max 0.086 0.094 0.005 0.020 0.035 0.030 0.045 0.205 0.215 0.018 0.024 0.018 0.023 0.213 0.245 0.205 0.250 0.265 0.170 - Millimeters Min Max 2.18 2.39 0.127 0.508 0.89 0.762 1.14 5.21 5.46 0.457 0.61 0.457 0.584 5.41 6.22 5.21 6.35 6.73 4.32 - DIM e H L L1 L2 L3 L4 L5 1 - Inches Min Max 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.065 0.025 0.040 0.045 0.060 0 10 0 15 - Millimeters Min Max 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.508 BSC 0.89 1.65 0.635 1.016 1.14 1.52 0 10 0 15 - Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - August 2006 (c) Zetex Semiconductors plc 2006 8 www.zetex.com |
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